Character Motivations in Antigone - 745 Words

The main characters in Sophocles’ drama, Antigone, are Antigone herself, the play’s tragic heroine and Antigone’s uncle and King of Thebes, Creon. Both characters are ruled by powerful motivations and beliefs; however, they differ from one character to the next. Antigone’s motivation is love for her family- she puts it above all else. In fact, she is willing to sacrifice her life to defend that love. Antigone goes to great lengths to bury her deceased brother, who according to an edict issued by King Creon, died in dishonor, consequently making it illegal for anyone to bury his body. Through her actions to comply with her motivations, it is revealed that Antigone’s actions are also fueled by her strong beliefs that, first, the gods’ laws†¦show more content†¦For these reasons, his character is a feared leader. First of all, the fact that he issues that his nephew cannot be buried shows that- one, he demands loyalty, even over loyalty to the gods, and two, he defends his country over his family. He continues displaying his beliefs when he doesn’t revoke the edict even after his wife, and niece clearly disagree with it. Creon’s pride continues to take precedent when he begins falsely accusingShow Mo reRelatedThe Conflict Between Nature Versus Human Institution937 Words   |  4 PagesAntigone by Sophocles is a play that has lasted through the ages because of its underlying meaning that can still be applied today in conflicts such as parents who choose to not vaccinate their children. It is a conflict between nature versus human institution. Throughout this play one notices there is no clear hero. The basic conflict in Antigone came about by a disagreement between two brothers in a royal family in Thebes, Eteocles and Polynices, Eteocles being the older brother. Antigone and IsmeneRead MoreEssay on Haimons Covert Scheme1021 Words   |  5 Pages nbsp;nbsp;nbsp;nbsp;nbsp;Haimon has a certain tendency to be overlooked in Sophocles’ Antigone. At first he appears to be a minor character, an accessory to the overt conflict occurring between Kreon and Antigone. We see Haimon supporting his father, but soon thereafter in conflict with him. Haimon expresses disregard for the l ife of his cold bride to be, yet is defined as being driven by lust. Several questions come up: who does Haimon really support, what drives his actions, and what is hisRead MoreAntigone Feminist Analysis1622 Words   |  7 PagesAntigone, a Greek tragedy pertaining to the events following the deaths of Eteocles and Polynices, Oedipus’ sons, due to a conflict over power. Upon the death of both children their uncle Creon takes the throne of Thebes for himself and declares Polynices a traitor to the state and withheld his burial rights from him. Antigone choose to disobey Creon’s decree and bury her bother. Sophocles’ play has been a long treasure piece of literature throughout the ages; sparking many papers and debates fromRead MoreEssay about Women Behaving Like Men in Antigone, Electra, and Medea842 Words   |  4 PagesWomen Behaving Like Men in Antigone, Electra, and Medea Throughout Antigone, Electra, and Medea, many double standards between men and women surface. These become obvious when one selects a hero from these plays, for upon choosing, then one must rationalize his or her choice. The question then arises as to what characteristics make up the hero. How does the character win fame? What exactly is excellent about that character? These questions must be answered in order to choose a heroRead MoreSophocles Antigone : The Third Of The Three Theban Tragic Plays1106 Words   |  5 PagesSophocles’s play, Antigone is the third of the three Theban tragic plays and was written around 440 B.C. and is still well known today. Sophocles s play Antigone tells a tragic story about family honor and a sister’s love for her brothers. After Antigone’s two brothers, Polynices and Eteocles died in battle, Creon became the new leader of Thebes. Creon orders that Eteocles have a proper burial while Polynices’s body remain u nburied, simply left to rot. Antigone refuses to let her brother’s bodyRead MoreAntigone Character Analysis1422 Words   |  6 Pages Antigone, the final play in a series including Oedipus Rex by Sophocles, discusses the ideas of leadership, family, and choices. It features two central characters: Antigone, a girl who chooses to illegally bury her brother, and Creon, a king who decrees the burial of the brother to be illegal. Upon the first encounter of the text, it appears that Antigone is the â€Å"hero† of the play, but on further analysis, one realizes that the tragic hero, as defined by Aristotle, is actually Creon. The ideaRead MoreThe Personal Dilemmas Of Creon Vs. Antigone920 Words   |  4 Pageslovers lie endlessly, caught in the web of duty.† - Stephen King (brainyquotes.com). In Sophocles’ Antigone as well as Anouilh’s version of the play duty versus personal motives is a very significant theme that heavily contributes to the outcome of the character’s actions. The two protagonists, in both plays, Creon and Antigone are aware of the negative consequences of their actions. Creon and Antigone both believe that they are correct within their arguments, regardless of their knowledge of the repercussionsRead MoreEssay on Creon As The Tragic Hero In Antigone602 Words   |  3 Pages Sophocles’ Antigone is, without a doubt, one of the greatest tragedies ever written. There are many questions that somebody could ask about this work, but this one intrigues me the most: Who is the tragic hero? Could it be Antigone? Or could it be Creon? Antigone might be the name of the tragedy, but I believe that Creon is the winning candidate. His role in the plot of this tragedy, his sensible tragic fault, and his dynamic character are the obvious reasons why I chose him as the tragic heroRead MoreAntigone: Sophocles and Creon839 Words   |  4 PagesCreon and Antigone are both honorable people and yet, both are fatally proud and that is the source of the tragedy. To what extent do you agree? During the time of Ancient Greece, tragic plays were commonly used to deliver a moral message to their audience. Sophocles’ â€Å"Antigone† demonstrates the dangers of hubris and the disaster it can cause using the conflict between the two central characters, Antigone and Creon, as the basis of the tragedy. Although they are honourable in their own differentRead MoreCreon Vs Antigone Essay911 Words   |  4 Pagesgoing to write about Creon versus Antigone. They both have strong character as Gender, Agency and State, laws. . Antigone is a woman who has a strong character that challenges the king Creon law in order to obey her beliefs. On other hand, Creon is effectively manufactured, however a fatigued and wrinkled man enduring the weights of running the show. A viable man, he immovably separates himself from the awful yearnings of Oedipus and his line. As he tells Antigone, his lone intrigue is in political

The Art Within The Film The Triumph Of The Will

The Art Within Just like France, the United States, and Russia, Germany also began to make films, as a way to entertain the working class in an inexpensive way. By 1933 Adolf Hitler came to power, creating very harsh social condition that made several writers, actors, and directors flee Germany because they feared that if they stayed they would have gotten killed. Joseph Goebbels later came to run the UFA, as a government owned production company to make films that were shown to civilians and the military as propaganda on March 13 , 1933, and intended to censor German cinema to make the people believe that they were fascist. Numerous movies in that period of time tried to steer clear of talking about the Holocaust to distract people from what was really happening and to make Hitler seem almost godlike. One film in particular directed by Leni Riefenstahl called The Triumph of the Will became a well known example of propaganda in film history. Throughout the film, you really get to experien ce a sense of historical context that influenced thousands of people during the time of World War 2. Today, several people view The Triumph of the Will and have a difficult time distinguishing whether or not they can conclude if they view the film as propaganda or an actual piece of art. Triumph of the Will is a documentary of the Nazi Party conference in 1934 in Nuremberg. From the first frame of the film, Riefenstahl captures every essence of how worshiped HitlerShow MoreRelatedThe Visual and Audio Representations in Arthur C Clarkes The Sentinel1374 Words   |  6 Pagesfound in director Stanley Kubricks film, 2001: A Space Odyssey. Clark actually aided Kubrick in writing the script for the movie, which was in no small part based on the work of literature the author had previously written (Soriano, 2008). To that end, Kubricks film functions as an example of many of the concepts originally denoted by Clark in The Sentinel. 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Department of Electrical and Computer Engineering Final Examination Free Essays

University of Waterloo Department of Electrical Computer Engineering ECE 231 Final Examination – Spring 2000 Aids: Formula Sheets (attached), Scientific Calculator Time Allowed: 3 hours Exam Type: Closed Book Instructor: C. R. Selvakumar Date: August 10, 2000 Max Marks: 100 Instructions: Answer all questions in PART-A and any two questions in full from PART-B. We will write a custom essay sample on Department of Electrical and Computer Engineering: Final Examination or any similar topic only for you Order Now State your assumptions clearly. Be concise, precise and clear in your answers General assumptions to be made when not specified in a question: (a) Assume that the semiconductor is Silicon. (b) Assume that the temperature T = 300K c) Use the data given in the formula sheets where needed. (d) Use the following expressions for the Effective Density of States in the Conduction Band (NC) and in the Valence Band (NV) respectively: 3 2 3 3 3 ? m ? ? T ? 2 ? 3 N C = 2. 5 ? 1019 ? ? cm ? m 0 ? ? 300 ? * n ? m* ? 2 ? T ? 2 p ?3 19 N V = 2. 5 ? 10 ? ? m ? ? 300? cm ? ? 0? PART -A 1a) Consider a Silicon p+-n diode with the following doping densities: NA = 1019 cm-3 and ND is 1016 cm-3. The diode has an area of 100  µm by 20  µm. (i) Without doing any calculations, sketch the capacitance versus reverse voltage (VR) starting from VR = 0. (4 marks) (ii) Calculate the voltage at which you will obtain the minimum capacitance and also determine (calculate) the minimum capacitance at that voltage. (10 marks) (iii) Derive the mathematical relations you use in calculating the quantities in (ii) above. (16 marks) 1b) Assuming that the p+ region and the n-region of the diode described in 1a) above are ‘long’ compared to the minority carrier diffusion lengths in those regions, show how you would obtain the complete Current-Voltage (I-V) Characteristic of the diode. You can assume that there is no recombination in the space-charge layer and you need not solve the continuity equation. Sketch the electron and hole current distributions in the entire device. (10 marks) Page 1 PART B 2a) Draw a clearly labelled band diagram of an n-p-n transistor under thermal equilibrium and superimpose on it a band diagram of the same transistor when it is under normal forward active mode of operations. (8 marks) 2b) Derive an expression for the common emitter current gain $ ($ = IC/IB), in terms of the doping densities in the different regions, thickness and carrier diffusivities and diffusion lengths. Assume that there is no recombination in the neutral base or in the space-charge layers. Also, assume that the conventional reverse saturation current of the reverse-biased diode, IC0, is negligible. Assume that short-region approximation is valid in the base and that the bandgap narrowing in the emitter is important. No need to solve continuity equations and you can assume the expected carrier distributions. (12 marks) 2c) Obtain the modified Ebers-Moll (EM) equations from the original EM equations given in the formula sheet. Sketch Common-Base output characteristics based on the modified EM equations and show the Forward Active Region of operation, Saturation Region and Cut-off Region. 10 marks) 3a) A silicon n-p-n transistor has an emitter doping NDE = 1020 cm-3 and a base doping NAB = 1016 cm-3. The emitter is 1  µm thick and assume that the hole diffusion length in the emitter is 0. 1 :m. The base is 0. 35 :m thick and you can use the values of mobilities and lifetimes given in the tables in the formula sheet to determine the electron diffusion length in the base. Verify that the short-region approximation is applicable to the base. Assume that the carrier recombinations in the neutral base an in the emitter-base depletion layer are zero. When this transistor is operating in the normal forward active mode with 0. volts forward bias across the emitter-base junction and a 2 volt reverse bias across the collector-base junction, what is the collector current density (JC) and the base current density (JB) ? You can assume that the depletion layer thicknesses are negligible at both junctions. Assume that bandgap narrowing for the emitter doping is 100 meV and the room temperature is 300K. (15 marks) 3b) What is the emitter efficiency of the transistor in 3a)? (5 marks) 3c) What do you understand by diffusion capacitance of a diode? Show (derive) that the diffusion capacitance of a p+ – n diode is approximately given by C Diffusion ? Qp Vt where Qp is the total injected minority hole charge on the n-side quasi-neutral=region and Vt is the thermal voltage (kT/q). Prove that the quantity Q p ? qAL p pn 0 e V Vt (10 marks) Page 2 4a) Consider an n-channel MOSFET and explain how the MOSFET operates using key band diagrams (along source, channel and drain and vertically along the metal gate, oxide and the channel region) and cross-sectional diagrams. State clearly wherefrom the channel electrons come and explain how this is controlled by the gate voltage. (10 marks) 4b) With reference to an n-p-n transistor, explain what is Early Effect and how it arises. Using an approximate sketch show the Early Voltage. Clearly illustrate your answer with the aid of carrier profiles and common-emitter output characteristics. (10 marks) 4c) Contrast the Temperature-dependence of Avalanche Breakdown Mechanism and Zener breakdown Mechanism. Illustrate your answer with sketches of Reverse bias I-V characteristics giving physical reasons. (10 marks) Page 3 ECE 231 1/4 Formula Sheet C. R. Selvakumar ECE 231 Formula Sheet 3 1 4? *2 g c (E) = 3 (2m n ) ( E ? E C )) 2 ; (E ? E c ) h 3 1 4? *2 2 g V (E) = 3 2m p ( E V ? E)) ; (E ? E V ) h 1 f FD (E) = (E-E F )/kT 1+ e p 0 = N V e (E V ? E F )/kT = n i e (Ei ? E F )/kT () n 0 p0 = n 2 i 3/2 ? 2? m* kT ? p N V = 2? ? 2 ? ? ?h ?  µn = q? c,n m* n and  µ p = q? c,p m* p ? max = ? qN A x p0 ? 0? r qN + x n0 D = ?0? r 1/2 x n0 ? 2? r ? 0 V0 ? NA =? ? q N D (N A + N D ) ? ? ? 2? r ? 0 V0 ? ND =? ? q N A (N A + N D ) ? ? 1/2 3/2 ? p 0 + N + = n0 + N A D + ? ?2 ? N D ? NA N + ? NA ? D ? + n2 ? + n0 = i 2 2 ? ? ? ? + ? N D x n0 = N A x p0 x p0 n 0 = N C e (E F ? EC )/ kT = n i e (E F ? E i )/kT ? 2? m* kT ? n N C = 2? ? 2 ?h ? ? kT ? n no p po ? kT ? N + N A ? D V0 = ln? ?= ln? ? q ? n2 ? q ? n2 ? i i p( x n0 ) = pn e qV / kT and ? pn = pn ( e qV / kT ? 1) 1/2 for n ? type , where ? c,n and ? ,p are mean time between collisions ? = qmn n + qm p p and r = 1/s dn ? dp ? ? ? J n = q? n µn ? + Dn ? ; J p = q ? p µ p ? ? D p ? ? ? dx ? dx ? D p Dn kT = = = 0. 0259 V at 300K  µ p  µn q n( ? x p0 ) = n p e qV / kT and ? n p = n p (e qV / kT ? 1) ? p( x n ) = ? pn e or ? p( x n ) = ? pn ( 0) e ? x p / Ln or ? n( x p ) = ? n p ( 0) e ?n( x p ) = ? n p e ? xn / L p ? x p / Ln ? Dn ? Dp ? I = qA? n p0 + p n0 ? (e qV/ kT ? 1) ? Lp ? Ln ? ? ? qN ? C j = A? Si d ? ? 2(V0 ? V ) ? 1/ 2 for p + ? n diffusion capacitance: C s = q 2 AL p kT p n0 e qV/kT for p + ? n n ? type regions of width, W: long base diode approx: I p = qAD p ? pn ( 0 ) Lp short base diode approx: I p = qAD p ?p 1 dJ p ?n 1 dJ n =? + G ? Rp; = ? + G ? Rn ?t q dx ?t q dx Wm = L p = D p ? p and Ln = Dn ? n VT = d 2V d? ? ? 2= = where ? = q ( p ? n + N d ? N a ) dx ? 0 ? r dx dV 1 dE c 1 dE v 1 dE t ?= ? = = = dx q dx q dx q dx ? xn / L p 2? Si ( 2? F ) qN a for VG Vth ? pn ( 0 ) W ? Si = ? 0 ? r ? Qd Qi + 2? F + ? ms ? , Ci Ci Q d = Q B = ? qN a x dm ,x dm = Wm ? Ci = Cox = 0 ox = i t ox d 1 2? ? Z? ? I D =  µ n Ci ? ? ? (VG ? VT )V D ? VD ? ? L? ? 2 ?  µ n Ci ? Z ? 2 I DSat = ? ? (V ? VT ) V Dsat = VG ? VT 2 ? L? G ECE 231 2/4 Formula Sheet C. R. Selvakumar Eber-Moll Model (n-p-n transistor) I EBO (e VBE / Vt ? 1) â€Å"RIC I CBO (e VBC /Vt ? 1) â€Å"FIE ? VBE ? ? VBC ? I E = ? I ES ? e Vt ? 1? + ? R I CS ? e Vt ? 1? ? ? ? ? ? ? ? ? ? VBE ? ? VBC ? Vt ?e ? + I CS ? e Vt ? 1? I C = ? R I ES ? ? 1? ? ? ? ? ? ? ECE 231 3/4 Formula Sheet C. R. Selvakumar Mobilities in Silicon N = doping density (cm ? 3 )  µ (N) =  µ min + Carrier type  µ0 N 1+ N ref :min :0 cm2 / (v. s) Nref cm-3 electron 88 1251. 8 1. 26 x 1017 hole 54. 3 406. 97 2. 35 x 1017 Doping density Mobilities Lifetimes (J) as function of doping density N :n :p 1 1 = + cA N2 ? ? SRH 1015 1016 1017 1018 1019 1020 1322. 3 1218. 2 777. 3 262. 1 114. 1 91. 5 457. 96 437. 87 330. 87 43. 23 68. 77 56. 28 cm 2 v. sec cm 2 v. sec cm ? 3 Doping density N cm-3 Lifetime J sec For both electrons and holes 1015 1016 1017 1018 1019 1020 9. 8 x 10-6 8. 3 x 10-6 3. 3 x 10-6 4. 5 x 10-7 3. 3 x 10-8 8. 3 x 10-10 Obtained using the above formula for lifetime using: JSRH = 10-5/(1 + 5 x 1016/N) and CA = 10-31 cm6s-1 ECE 231 4/ 4 Formula Sheet C. R. Selvakumar Properties of Silicon and Gallium Arsenide PROPERTY Si GaAs atoms or molecules/ cm3 5. 0 x 1022 4. 42 x 1022 atomic or molecular weight 28. 08 144. 63 density g/cm3 2. 33 5. 32 breakdown field V/cm 3 x 105 4 x 105 dielectric constant, gr 11. 8 13. 1 effective density of tates: Nc cm-3 Nv cm-3 Physical Constants ?1. 38Ãâ€"10 ? 23 J / K ? k ? ?8. 62Ãâ€"10 ? 5 eV / K ? ? 31 m0 9. 11Ãâ€"10 kg ?0 8. 85Ãâ€"10 ? 14 ? r (Si) 2. 8 x 1019 1. 04 x 1019 4. 7 x 1017 7. 0 x 1018 11. 8 ? r (SiO 2 ) 3. 9 h electron affinity, eV 4. 05 6. 62Ãâ€"10 c 3Ãâ€"10 q 1. 6Ãâ€"10 4. 07 energy gap, eV 1. 12 1. 43 intrinsic carrier conc. , ni cm-3 at T = 300K 1. 5 x 1010 1. 8 x 106 effective mass electrons holes m*n = 1. 1 m0 m*p = 0. 56 m0 m*n = 0. 067 m0 m*p = 0. 48 m0 intrinsic mobility @ 300K electrons cm2/Vs holes cm2/Vs 1350 480 8500 400 diffusivity @300K: electrons cm2/s holes cm2/s 35 12. 5 220 10 F / cm 10 ? 34 J ? s cm / s ? 19 C How to cite Department of Electrical and Computer Engineering: Final Examination, Essay examples